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| inchange semiconductor product specification silicon pnp darligton power transistors BD676/bd678/bd680 description ? ? with to-126 package ? complement to type bd675/bd677/bd679 ? darlington ?high dc current gain applications ? for use as output devices in complementary general?purpose amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD676 -45 bd678 -60 v cbo collector-base voltage bd680 open emitter -80 v BD676 -45 bd678 -60 v ceo collector-emitter voltage bd680 open base -80 v v ebo emitter -base voltage open collector -5 v i c collector current -4 a i b base current -0.1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 3.13 ??/w
inchange semiconductor product specification 2 silicon pnp darligton power transistors BD676/bd678/bd680 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD676 -45 bd678 -60 v (br)ceo collector-emitter breakdown voltage bd680 i c =-50ma;i b =0 -80 v BD676 -45 bd678 -60 v (br)cbo collector-base breakdown voltage bd680 i c =-1ma; i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-5ma;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-1.5a; i b =-30ma -2.5 v v be(on) base-emitter on voltage i c =-1.5a ; v ce =-3v -2.5 v i cbo collector cut-off current v cb =rated bv ceo ; i e =0 t a =100 ?? -0.2 -2.0 ma i ceo collector cut-off current v ce =1/2rated bv ceo ; i b =0 -0.5 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe dc current gain i c =-1.5a ; v ce =-3v 750 inchange semiconductor product specification 3 silicon pnp darligton power transistors BD676/bd678/bd680 package outline fig.2 outline dimensions |
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